Volume 14

Issue 06,2021

(36 articles)


Yongfeng Pei, Rui Chen, Hang Xu, Dong He, Changzhong Jiang, Wenqing Li (✉), and Xiangheng Xiao (✉)

The vapour phase methods have been widely used in the growth of two-dimensional (2D) metal dichalcogenides and their heterostructures. Recent progress about high-performance photodetectors based on metal dichalcogenides and various heterostructures has been summarized.
2021, 14(6): 1819–1839
Published: 15 November 2020

Fang Zhong1,2,3,§, Hao Wang1,2,§, Zhen Wang1,2 (✉), Yang Wang1, Ting He1,2, Peisong Wu1,2, Meng Peng1,2, Hailu Wang1, Tengfei Xu1, Fang Wang1, Peng Wang1,2, Jinshui Miao1, and Weida Hu1,2 (✉)

In this review, the progress and challenges on two-dimensional (2D) material photodetectors are systematically discussed from the perspective of advanced characterization technologies, including transmission electron microscopy (TEM), Raman, photoluminescence (PL) spectroscopy and Kelvin probe force microscope (KPFM), scanning photocurrent microscope (SPCM), and scattering scanning near-field optical microscope (s-SNOM). These technologies provide access to deep comprehension of intrinsic mechanisms and further facilitate the development of next-generation photodetectors based on 2D materials.
2021, 14(6): 1840–1862
Published: 08 December 2020

Jiangbin Wu1 (✉), Nan Wang2, Xiaodong Yan1, and Han Wang1,2 (✉)

Recent progress in study of mid-infrared (IR) detectors based on the low-dimensional materials, including black phosphorus, black arsenic phosphorus, tellurene and BaTiS3, from the perspectives of crystal structure, material synthesis, optical properties, and the detector characteristics was reviewed.
2021, 14(6): 1863–1877
Published: 23 October 2020

Jinshui Miao1 (✉) and Chuan Wang2 (✉)

Impact ionization, which can achieve carrier multiplication, is a promising strategy to design two-dimensional (2D) material-based photodetectors with high gain. In this review, a host of emerging avalanche photodetectors based on 2D materials and their van der Waals heterostructures, and their potential applications in the field of photon-counting technologies are detailed.
2021, 14(6): 1878–1888
Published: 07 August 2020

Wenhui Wang, Junpeng Lu (*), and Zhenhua Ni (*)

This review summarizes the structures, carrier dynamics, and applications of position-sensitive detector (PSD) based twodimensional (2D) materials, and highlights the challenges and opportunities in this research area.
2021, 14(6): 1889–1900
Published: 30 June 2020

Abdullah Rasmita1 and Wei-bo Gao1,2 (✉)

In this article, we review the current understanding of the optical valley physics in the two-dimensional (2D) heterostructure composed of transition metal dichalcogenide and other materials. The challenge of building opto-valleytronics applications using the 2D heterostructure is also discussed.
2021, 14(6): 1901–1911
Published: 12 September 2020

Yi Zhu1,2,§, Xueqian Sun1,§, Yilin Tang1, Lan Fu2, and Yuerui Lu1 (✉)

Two-dimensional materials provide tremendous opportunities for future on chip light sources.
2021, 14(6): 1912–1936
Published: 06 November 2020

Liyun Zhao§, Qiuyu Shang§, Meili Li, Yin Liang, Chun Li, and Qing Zhang (✉)

Recent advances in the strong exciton–photon interaction and lasing of two dimensional transition metal dichalcogenide semiconductors have been developed in the fields of ultra-small and low-energy consumption coherent light sources.
2021, 14(6): 1937–1954
Published: 21 September 2020

Xinxin Zhao1,3,§, Qing Yin2,3,§, Hao Huang4, Qiang Yu3, Bo Liu5, Jie Yang1,3, Zhuo Dong1,3, Zhenjiang Shen6, Benpeng Zhu7, Lei Liao4, and Kai Zhang3 (*)

Ultrathin crystalline PbTe nanosheets in lateral size of tens of microns with thickness down to ~ 7 nm are synthesized by van der Waals epitaxy. Photodetectors based on the as-grown 2D PbTe nanosheets exhibit an ultrahigh responsivity of 3,847 A/W at the wavelength of 1,550 nm under room temperature.
2021, 14(6): 1955–1960
Published: 22 May 2020

Vinod K. Sangwan1, Joohoon Kang1,†, David Lam1, J. Tyler Gish1, Spencer A. Wells1, Jan Luxa2, James P. Male1, G. Jeffrey Snyder1, Zdeněk Sofer2, and Mark C. Hersam1,3,4 (✉)

Metal-semiconductor-metal avalanche photodiodes are fabricated from layered Bi2O2Se crystals, yielding intrinsic carrier multiplication factors up to 400, gain bandwidth products exceeding 1 GHz, and detectivities up to 4.6 × 1014 Jones.
2021, 14(6): 1961–1966
Published: 15 September 2020